Publications

P. B. Meisenheimer, R. A. Steinhardt, S. H. Sung, L. D. Williams, S. Zhuang, M. E. Nowakowski, S. Novakov, M. M. Torunbalci, B. Prasad, C. J. Zollner, Z. Wang, N. M. Dawley, J. Schubert, A. H. Hunter, S. Manipatruni, et al.

Engineering new limits to magnetostriction through metastability in iron-gallium alloys

Nature Communications 12 (2021)

10.1038/s41467-021-22793-x

Y. Wang, H. P. Nair, N. J. Schreiber, J. P. Ruf, B. Cheng, D. G. Schlom, K. M. Shen, and N. P. Armitage

Separated transport relaxation scales and interband scattering in thin films of SrRuO3 , CaRuO3 , and Sr2RuO4

Physical Review B 103 (2021)

10.1103/physrevb.103.205109

F. V. E. Hensling, D. Dahliah, P. Dulal, P. Singleton, J. Sun, J. Schubert, H. Paik, I. Subedi, B. Subedi, G. Rignanese, N. J. Podraza, G. Hautier, and D. G. Schlom

Epitaxial stannate pyrochlore thin films: Limitations of cation stoichiometry and electron doping

APL Materials 9 (2021)

10.1063/5.0049334

C. J. “. Wright, E. Dooryhée, L. A. Pressley, W. A. Phelan, P. G. Khalifah, and S. J. L. Billinge

Toward In Situ Synchrotron Mapping of Crystal Selection Processes during Crystal Growth

Chemistry of Materials 33 3359-3367 (2021)

10.1021/acs.chemmater.1c00602

Y. Guo, B. Goodge, L. Zhang, J. Jiang, Y. Chen, L. F. Kourkoutis, and J. Shi

Unit-cell-thick domain in free-standing quasi-two-dimensional ferroelectric material

Physical Review Materials 5 (2021)

10.1103/physrevmaterials.5.044403

Y. Li, Z. Wang, R. Xiao, Q. Li, K. Wang, A. Richardella, J. Wang, and N. Samarth

Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface

Physical Review Materials 5 (2021)

10.1103/physrevmaterials.5.034802

X. Zheng, E. Gerber, J. Park, D. Werder, O. Kigner, E. Kim, S. Xie, and D. G. Schlom

Utilizing complex oxide substrates to control carrier concentration in large-area monolayer MoS2 films

Applied Physics Letters 118 (2021)

10.1063/5.0038383

A. Sebastian, R. Pendurthi, T. H. Choudhury, J. M. Redwing, and S. Das

Benchmarking monolayer MoS2 and WS2 field-effect transistors

Nature Communications 12 (2021)

10.1038/s41467-020-20732-w

Y. Xu, C. Horn, J. Zhu, Y. Tang, L. Ma, L. Li, S. Liu, K. Watanabe, T. Taniguchi, J. C. Hone, J. Shan, and K. F. Mak

Creation of moiré bands in a monolayer semiconductor by spatially periodic dielectric screening

Nature Materials 20 645-649 (2021)

10.1038/s41563-020-00888-y

X. Wu, S. B. Chung, C. Liu, and E. Kim

Topological orders competing for the Dirac surface state in FeSeTe surfaces

Physical Review Research 3 (2021)

10.1103/physrevresearch.3.013066