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Publications

Y. Wang, J. Balgley, E. Gerber, M. Gray, N. Kumar, X. Lu, J. Yan, A. Fereidouni, R. Basnet, S. J. Yun, D. Suri, H. Kitadai, T. Taniguchi, K. Watanabe, X. Ling, et al.
Modulation Doping via a Two-Dimensional Atomic Crystalline Acceptor
Nano Letters
20
8446-8452
(2020)
A. Bhargava, R. Eppstein, J. Sun, M. A. Smeaton, H. Paik, L. F. Kourkoutis, D. G. Schlom, M. Caspary Toroker, and R. D. Robinson
Breakdown of the Small‐Polaron Hopping Model in Higher‐Order Spinels
Advanced Materials
32
(2020)
R. Held, T. Mairoser, A. Melville, J. A. Mundy, M. E. Holtz, D. Hodash, Z. Wang, J. T. Heron, S. T. Dacek, B. Holländer, D. A. Muller, and D. G. Schlom
Exploring the intrinsic limit of the charge-carrier-induced increase of the Curie temperature of Lu- and La-doped EuO thin films
Physical Review Materials
4
(2020)
G. Kim, K. Son, Y. E. Suyolcu, L. Miao, N. J. Schreiber, H. P. Nair, D. Putzky, M. Minola, G. Christiani, P. A. van Aken, K. M. Shen, D. G. Schlom, G. Logvenov, and B. Keimer
Inhomogeneous ferromagnetism mimics signatures of the topological Hall effect in SrRuO3 films
Physical Review Materials
4
(2020)
V. Goian, R. Held, E. Bousquet, Y. Yuan, A. Melville, H. Zhou, V. Gopalan, P. Ghosez, N. A. Spaldin, D. G. Schlom, and S. Kamba
Making EuO multiferroic by epitaxial strain engineering
Communications Materials
1
(2020)
I. El Baggari, N. Sivadas, G. M. Stiehl, J. Waelder, D. C. Ralph, C. J. Fennie, and L. F. Kourkoutis
Direct Visualization of Trimerized States in 1TTaTe2
Physical Review Letters
125
(2020)
M. Schloz, T. C. Pekin, Z. Chen, W. Van den Broek, D. A. Muller, and C. T. Koch
Overcoming information reduced data and experimentally uncertain parameters in ptychography with regularized optimization
Optics Express
28
28306
(2020)
A. Dodda, A. Oberoi, A. Sebastian, T. H. Choudhury, J. M. Redwing, and S. Das
Stochastic resonance in MoS2 photodetector
Nature Communications
11
(2020)
D. Jayachandran, A. Oberoi, A. Sebastian, T. H. Choudhury, B. Shankar, J. M. Redwing, and S. Das
A low-power biomimetic collision detector based on an in-memory molybdenum disulfide photodetector
Nature Electronics
3
646-655
(2020)
L. Miao, N. J. Schreiber, H. P. Nair, B. H. Goodge, S. Jiang, J. P. Ruf, Y. Lee, M. Fu, B. Tsang, Y. Li, C. Zeledon, J. Shan, K. F. Mak, L. F. Kourkoutis, D. G. Schlom, et al.
Strain relaxation induced transverse resistivity anomalies in SrRuO3 thin films
Physical Review B
102
(2020)