Skip to main content

Publications

C. J. “. Wright, E. Dooryhée, L. A. Pressley, W. A. Phelan, P. G. Khalifah, and S. J. L. Billinge
Toward In Situ Synchrotron Mapping of Crystal Selection Processes during Crystal Growth
Chemistry of Materials
33
3359-3367
(2021)
Y. Guo, B. Goodge, L. Zhang, J. Jiang, Y. Chen, L. F. Kourkoutis, and J. Shi
Unit-cell-thick domain in free-standing quasi-two-dimensional ferroelectric material
Physical Review Materials
5
(2021)
Y. Li, Z. Wang, R. Xiao, Q. Li, K. Wang, A. Richardella, J. Wang, and N. Samarth
Capping layer influence and isotropic in-plane upper critical field of the superconductivity at the FeSe/SrTiO3 interface
Physical Review Materials
5
(2021)
X. Zheng, E. Gerber, J. Park, D. Werder, O. Kigner, E. Kim, S. Xie, and D. G. Schlom
Utilizing complex oxide substrates to control carrier concentration in large-area monolayer MoS2 films
Applied Physics Letters
118
(2021)
A. Sebastian, R. Pendurthi, T. H. Choudhury, J. M. Redwing, and S. Das
Benchmarking monolayer MoS2 and WS2 field-effect transistors
Nature Communications
12
(2021)
Y. Xu, C. Horn, J. Zhu, Y. Tang, L. Ma, L. Li, S. Liu, K. Watanabe, T. Taniguchi, J. C. Hone, J. Shan, and K. F. Mak
Creation of moiré bands in a monolayer semiconductor by spatially periodic dielectric screening
Nature Materials
20
645-649
(2021)
X. Wu, S. B. Chung, C. Liu, and E. Kim
Topological orders competing for the Dirac surface state in FeSeTe surfaces
Physical Review Research
3
(2021)
M. A. Smeaton, I. El Baggari, D. M. Balazs, T. Hanrath, and L. F. Kourkoutis
Mapping Defect Relaxation in Quantum Dot Solids upon In Situ Heating
ACS Nano
15
719-726
(2021)
J. P. Ruf, H. Paik, N. J. Schreiber, H. P. Nair, L. Miao, J. K. Kawasaki, J. N. Nelson, B. D. Faeth, Y. Lee, B. H. Goodge, B. Pamuk, C. J. Fennie, L. F. Kourkoutis, D. G. Schlom, and K. M. Shen
Strain-stabilized superconductivity
Nature Communications
12
(2021)
M. R. Scudder, B. He, Y. Wang, A. Rai, D. G. Cahill, W. Windl, J. P. Heremans, and J. E. Goldberger
Highly efficient transverse thermoelectric devices with Re4Si7 crystals
Energy & Environmental Science
14
4009-4017
(2021)
NSF Logo

This website is maintained collaboratively by teams supported by the Materials Innovation Platform awards, independent of the NSF. Any opinions, findings, and conclusions or recommendations expressed on this website are those of the team(s) and do not necessarily reflect the views of the National Science Foundation or the participating institutions.