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Publications

J. Venderley, and E. Kim
Density matrix renormalization group study of superconductivity in the triangular lattice Hubbard model
Physical Review B 100 (2019)
M. F. Reynolds, K. L. McGill, M. A. Wang, H. Gao, F. Mujid, K. Kang, J. Park, M. Z. Miskin, I. Cohen, and P. L. McEuen
Capillary Origami with Atomically Thin Membranes
Nano Letters 19 6221-6226 (2019)
C. M. Pasco, I. El Baggari, E. Bianco, L. F. Kourkoutis, and T. M. McQueen
Tunable Magnetic Transition to a Singlet Ground State in a 2D van der Waals Layered Trimerized Kagomé Magnet
ACS Nano 13 9457-9463 (2019)
M. Coll, J. Fontcuberta, M. Althammer, M. Bibes, H. Boschker, A. Calleja, G. Cheng, M. Cuoco, R. Dittmann, B. Dkhil, I. El Baggari, M. Fanciulli, I. Fina, E. Fortunato, C. Frontera, et al.
Towards Oxide Electronics: a Roadmap
Applied Surface Science 482 1-93 (2019)
H. Zheng, J. Zhang, B. Wang, D. Phelan, M. J. Krogstad, Y. Ren, W. A. Phelan, O. Chmaissem, B. Poudel, and J. F. Mitchell
High pO2 Floating Zone Crystal Growth of the Perovskite Nickelate PrNiO3
Crystals 9 324 (2019)
J. N. Nelson, J. P. Ruf, Y. Lee, C. Zeledon, J. K. Kawasaki, S. Moser, C. Jozwiak, E. Rotenberg, A. Bostwick, D. G. Schlom, K. M. Shen, and L. Moreschini
Dirac nodal lines protected against spin-orbit interaction in IrO2
Physical Review Materials 3 (2019)
T. N. Walter, S. Lee, X. Zhang, M. Chubarov, J. M. Redwing, T. N. Jackson, and S. E. Mohney
Atomic layer deposition of ZnO on MoS2 and WSe2
Applied Surface Science 480 43-51 (2019)
Y. Ou, Z. Wang, C. S. Chang, H. P. Nair, H. Paik, N. Reynolds, D. C. Ralph, D. A. Muller, D. G. Schlom, and R. A. Buhrman
Exceptionally High, Strongly Temperature Dependent, Spin Hall Conductivity of SrRuO3
Nano Letters 19 3663-3670 (2019)
R. C. Haislmaier, Y. Lu, J. Lapano, H. Zhou, N. Alem, S. B. Sinnott, R. Engel-Herbert, and V. Gopalan
Large tetragonality and room temperature ferroelectricity in compressively strained CaTiO3 thin films
APL Materials 7 (2019)
T. Kong, K. Stolze, E. I. Timmons, J. Tao, D. Ni, S. Guo, Z. Yang, R. Prozorov, and R. J. Cava
VI3—a New Layered Ferromagnetic Semiconductor
Advanced Materials 31 (2019)
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